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2SD667 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 2SD667
Description  SILICON NPN EPITAXIAL
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SD667 Datasheet(HTML) 2 Page - Unisonic Technologies

  2SD667 Datasheet HTML 1Page - Unisonic Technologies 2SD667 Datasheet HTML 2Page - Unisonic Technologies 2SD667 Datasheet HTML 3Page - Unisonic Technologies 2SD667 Datasheet HTML 4Page - Unisonic Technologies  
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2SD667
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R211-019.A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
120
V
Collector to Emitter Voltage
VCEO
100
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
1.0
A
Collector Peak Current (Note2)
ICP
2.0
A
Collector Power Dissipation
PC
0.9
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. PW≤10ms, Duty cycle≤20%
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector to Base Breakdown Voltage
BVCBO
IC=100μA, IE=0
120
V
Collector to Emitter Breakdown Voltage
BVCEO
IC=10mA, RBE=∞
100
V
Emitter to Base Breakdown Voltage
BVEBO
IE=100μA, IC=0
6
V
Collector Cutoff Current
ICBO
VCB=120V, IE=0
500
nA
Emitter Cutoff Current
IEBO
VEB=6V, IC=0
500
nA
hFE1
VCE=2V, IC=150mA
140
330
DC Current Transfer Ratio
hFE2
VCE=5V, IC=1A
40
Collector to Emitter Saturation Voltage
VCE(SAT)
IC=500mA, IB=50mA
0.5
V
Base to Emitter Saturation Voltage
VBE(SAT)
IC=500mA, IB=50mA
1.1
V



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