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2SD667 Datasheet(PDF) 3 Page - Unisonic Technologies

Part # 2SD667
Description  SILICON NPN EPITAXIAL
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SD667 Datasheet(HTML) 3 Page - Unisonic Technologies

  2SD667 Datasheet HTML 1Page - Unisonic Technologies 2SD667 Datasheet HTML 2Page - Unisonic Technologies 2SD667 Datasheet HTML 3Page - Unisonic Technologies 2SD667 Datasheet HTML 4Page - Unisonic Technologies  
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2SD667
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R211-019.A
TYPICAL CHARACTERISTICS
0
20
60
80
100
120
40
Emitter Current vs. Emitter-Base Voltage
02
4
6
8
10
12
Emitter-Base Voltage, VEB (V)
12
3
4
5
6
Collector-Emitter Voltage, VCE (V)
0
0
20
40
80
100
120
140
60
Collector Current vs. Collector-
Emitter Voltage
7
160
180
IB=90μA
IB=290μA
IB=490μA
IB=890μA
IB=1090μA
IB=690μA



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