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2SD880 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 2SD880
Description  NPN EPITAXIAL TRANSISTOR
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SD880 Datasheet(HTML) 2 Page - Unisonic Technologies

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2SD880
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R203-013.D
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
60
V
Emitter to Base Voltage
VEBO
7
V
Collector Current
IC
3
A
Base Current
IB
0.5
A
Power Dissipation
PD
30
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
A =25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Emitter Breakdown Voltage
BVCEO
IC=50mA, IE=0
60
V
Collector Cut-Off Current
ICBO
VCB=60V, IE=0
100
µA
Emitter Cut-Off Current
IEBO
VEB=7V, IC=0
100
µA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=3A, IB=300mA
1
V
Base-Emitter Saturation Voltage
VBE(ON)
VCE=5V, IC=500mA
1
V
DC Current Gain
hFE
IC=500mA, VCE=5V
100
200
Current gain bandwidth product
fT
VCE=5V, IC=500mA
3
MHZ



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