3N50

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-530.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

±30

V

3 *

A

Drain Current

Pulsed (Note 1)

12 *

A

Avalanche Current (Note 1)

3

A

Single Pulsed (Note 2)

200

mJ

Avalanche Energy

Repetitive (Note 3)

6.2

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

TO-220F

25

TO-252

50

W

TO-220F

0.2

Power Dissipation

Derate above 25°C

TO-252

0.4

W/°C

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

* Drain current limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220F

62.5

Junction to Ambient

TO-252

110

°C/W

TO-220F

4.9

Junction to Case

TO-252

2.5

°C/W