3N50G-TN3-R datasheet(3/6 Pages) UTC

3 / 6 page

3N50

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-530.a

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

500

Drain-Source Leakage Current

IDSS

VDS=500V, VGS=0V

µA

Forward

VGS=+30V, VDS=0V

+100 nA

Gate- Source Leakage Current

Reverse

IGSS

VGS=-30V, VDS=0V

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=1.5A

2.1

2.5

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

280 365

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

VGS=0V, VDS=25V, f=1.0MHz

8.5

SWITCHING PARAMETERS

Total Gate Charge

Gate to Source Charge

QGS

1.5

Gate to Drain Charge

QGD

VGS=10V, VDS=400V, ID=3A

(Note 4, 5)

5.5

Turn-ON Delay Time

tD(ON)

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall-Time

VDD=250V, ID=3A, RG=25Ω

(Note 4, 5)

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

ISM

Drain-Source Diode Forward Voltage

VSD

IS=3A, VGS=0V

1.4

Body Diode Reverse Recovery Time

tRR

170

Body Diode Reverse Recovery Charge

QRR

IS=3A, VGS=0V, dIF/dt=100A/µs

(Note 4)

0.7

µC

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 40mH, IAS = 3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

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