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5N80 Datasheet(PDF) 3 Page - Unisonic Technologies |
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5N80 Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 5 page ![]() 5N80 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 5 www.unisonic.com.tw QW-R502-483.b ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 800 V VDS=Max Rating 250 Drain-Source Leakage Current IDSS VDS= Max Rating×0.8, TC=125°C 1000 µA Forward VGS=+20V +100 nA Gate- Source Leakage Current Reverse IGSS VGS=-20V -100 nA ON CHARACTERISTICS (Note 1) Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3 5 V VGS=10V, ID=2.5A 1.8 2.6 Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2.5A, TC=100°C 4 Ω On State Drain Current ID(ON) VDS>ID(ON)×RDS(ON)max, VGS=10V 5 A Forward Transconductance (Note 1) gFS VDS>ID(ON)×RDS(ON)max, ID=2.5A 2 4 S DYNAMIC PARAMETERS Input Capacitance CISS 1190 1450 pF Output Capacitance COSS 165 200 pF Reverse Transfer Capacitance CRSS VGS=0V, VDS=25V, f=1.0MHz 70 85 pF SWITCHING PARAMETERS Total Gate Charge QG 75 95 nC Gate to Source Charge QGS 9 nC Gate to Drain Charge QGD VGS=10V, VDD=500V, ID=6A 33 nC Turn-ON Delay Time tD(ON) 50 65 ns Rise Time tR VDD=400V, ID=2.5A, RG=50Ω VGS=10V (See test circuit, Fig. 3) 85 105 ns Turn-OFF Delay Time tD(OFF) 120 150 ns Fall-Time tF 30 40 ns Cross-Over Time tC VDD=640V, ID=5.5A, RG=50Ω VGS=10V (See test circuit, Fig. 5) 160 200 ns Turn-On Current Slope (di/dt)on VDD=640V, ID=5.5A, RG=50Ω VGS=10V (See test circuit, Fig. 5) 200 A/µs SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note 1) VSD ISD=5.5A, VGS=0V 2 V Reverse Recovery Time tRR 700 ns Reverse Recovery Charge QRR 7.7 nC Reverse Recovery Current IRRM ISD=5.5A,dI/dt=100A/µs, VDD=80V,TJ=150°C (See test circuit, Fig. 5) 22 A Source-Drain Current ISD 5.5 A Source-Drain Current (Pulsed) (Note 1) ISDM 20 A Notes: 1. Pulsed: Pulse duration=300µs, duty cycle 1.5%. 2. Pulse width limited by safe operating area. 3. Starting TJ=25°C, ID=IAR, VDD=50V |
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