12N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 7

www.unisonic.com.tw

QW-R502-170.E

PARAMETER

SYMBOL

RATINGS

UNIT

12N60-A

600

V

Drain-Source Voltage

12N60-B

650

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

12

A

Continuous

12

A

Drain Current

Pulsed (Note 2)

48

A

Single Pulsed (Note 3)

790

mJ

Avalanche Energy

Repetitive (Note 2)

24

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220

225

°C/W

Power Dissipation

TO-220F/TO-220F1

51

°C/W

Junction Temperature

+150

°C

Operating Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

62.5

°C/W

TO-220

0.56

°C/W

Junction to Case

TO-220F/TO-220F1

2.43

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

12N60-A

600

V

Drain-Source Breakdown Voltage

12N60-B

650

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

±100 nA

Breakdown Voltage Temperature

Coefficient

BV

△

0.7

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

0.55 0.8

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

1480 1900 pF

Output Capacitance

200 270

pF

Reverse Transfer Capacitance

25

35

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

30

70

ns

Turn-On Rise Time

115 240

ns

Turn-Off Delay Time

95

200

ns

Turn-Off Fall Time

(Note 4, 5)

85

180

ns

Total Gate Charge

42

54

nC

Gate-Source Charge

8.6

nC

Gate-Drain Charge

(Note 4, 5)

21

nC