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18N40 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 18N40
Description  400V N-CHANNEL POWER MOSFET
PDF  3 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

18N40 Datasheet(HTML) 2 Page - Unisonic Technologies

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18N40
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-389.A
ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
400
V
Gate-Source Voltage
VGSS
±30
V
Continuous
ID
18
A
Drain Current
Pulsed
IDM
45
A
Avalanche Current
IAR
18
A
Single Pulsed
EAS
1000
mJ
Avalanche Energy
Repetitive
EAR
30
mJ
Peak Diode Recovery dv/dt
dv/dt
10
V/ns
Power Dissipation
PD
360
W
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Case
θJC
0.35
°С/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
400
V
Drain-Source Leakage Current
IDSS
VDS=400V, VGS=0V
25
µA
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±30V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=9A (Note)
200
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
2500
pF
Output Capacitance
COSS
280
pF
Reverse Transfer Capacitance
CRSS
VDS=25V, VGS=0V, f=1MHz
23
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
50
nC
Gate Source Charge
QGS
15
nC
Gate Drain Charge
QGD
VGS=10V, VDS=0.5VDSS,
ID=18A, RG=5Ω (External)
18
nC
Turn-ON Delay Time
tD(ON)
21
ns
Turn-ON Rise Time
tR
22
ns
Turn-OFF Delay Time
tD(OFF)
62
ns
Turn-OFF Fall-Time
tF
VGS=10V, VDS=0.5VDSS,
ID=9A
22
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IF=IS ,VGS=0V (Note)
1.5
V
Maximum Continuous Drain-Source
Diode Forward Current
IS
VGS=0V
18
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Repetitive
54
A
Reverse Recovery Time
tRR
200
ns
Reverse Recovery Charge
QRR
VGS=0V, dIF/dt=100A/µs,
IS=18A, VR=100V
0.8
µC
Note: Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.



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