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18N50 Datasheet(PDF) 2 Page - Unisonic Technologies |
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18N50 Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 6 page ![]() 18N50 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-477.b ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 500 V Gate to Source Voltage VGSS ±30 V Continuous ID 18 A Drain Current Pulsed (Note 1) IDM 72 (Note 6) A Single Pulsed (Note 2) EAS 945 mJ Avalanche Energy Repetitive (Note 1) EAR 23.5 mJ Avalanche Current (Note 1) IAR 18 A Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation PD 38.5 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJc 3.3 °C/W |
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