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18N50 Datasheet(PDF) 1 Page - Unisonic Technologies |
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18N50 Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., LTD 18N50 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-477.b 18 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N50 is an N-channel enhancement mode Power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resistance and high switching speed. This device is generally applied in active power factor correction and high efficient switched mode power supplies. FEATURES * 18A, 500V, RDS(ON)=0.265Ω @ VGS=10V * High switching speed * Typically 45nC low gate charge * 100% avalanche tested * Typically 25pF low CRSS * Improved dv/dt capability SYMBOL 1.Gate 3.Source 2.Drain ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 18N50L-TF1-T 18N50G -TF1-T TO-220F1 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source |
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