13N50

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-362.c

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

±30

V

Continuous Drain Current

13

A

Pulsed Drain Current (Note 2)

52

A

Avalanche Current (Note 2)

13

A

Single Pulsed Avalanche Energy (Note 3)

810

mJ

Repetitive Avalanche Energy (Note 2)

17

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220

168

W

TO-220F

48

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220

62.5

°C/W

Junction to Ambient

TO-220F

62.5

°C/W

TO-220

0.74

°C/W

Junction to Case

TO-220F

2.58

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

500

V

Drain-Source Leakage Current

1

μA

100

nA

Gate-Source Leakage Current

-100

nA

Breakdown Voltage Temperature

Coefficient

△

Referenced to 25°C

0.5

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

0.33

0.43

Ω

Forward Transconductance

10

S

DYNAMIC CHARACTERISTICS

Input Capacitance

1800 2300

pF

Output Capacitance

245

320

pF

Reverse Transfer Capacitance

25

35

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

40

90

nS

Turn-On Rise Time

140

290

nS

Turn-Off Delay Time

100

210

nS

Turn-Off Fall Time

85

180

nS

Total Gate Charge

45

60

nC

Gate-Source Charge

11

nC

Gate-Drain Charge

(Note 1, 2)

22

nC