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22N65 Datasheet(PDF) 2 Page - Unisonic Technologies |
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22N65 Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 5 page  22N65 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R502-466.a ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current IAR 22 A Continuous Drain Current ID 22 A Pulsed Drain Current (Note 1) IDM 88 A Single Pulsed EAS 380 mJ Avalanche Energy Repetitive EAR 37 mJ Peak Diode Recovery dv/dt (Note 2) dv/dt 18 V/ns Power Dissipation PD 370 W Junction Temperature TJ 150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Repetitive rating; pulse width limited by max. junction temperature. 2. ISD ≤ 22A, di/dt ≤540 A/μs, VDD ≤ V(BR)DSS, TJ ≤150°C. 3. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 40 °C /W Junction to Case θJC 0.34 °C /W ELECTRICAL CHARACTERISTICS (TJ =25°C, L = 1.5mH, RG=25Ω, IAS = 22A. Unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 650 V Drain-Source Leakage Current IDSS VDS=650V, VGS=0V 50 µA Gate- Source Leakage Current IGSS VDS=0V, VGS=±30V ±100 nA Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=1mA, Referenced to 25°C 0.30 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=13A (Note 2) 0.3 0.35 Ω DYNAMIC PARAMETERS Input Capacitance CISS 3570 pF Output Capacitance COSS 350 pF Reverse Transfer Capacitance CRSS VDS=25V, VGS=0V, f=1.0MHz 36 pF SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) 26 ns Turn-ON Rise Time tR 99 ns Turn-OFF Delay Time tD(OFF) 48 ns Turn-OFF Fall-Time tF VDD=300V, ID=22A, RG=6.2Ω VGS=10V (Note 2) 37 ns Total Gate Charge QG 150 nC Gate Source Charge QGS 45 nC Gate Drain Charge QGD VDS=480V, VGS=10V, ID=22A (Note 2) 76 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, IS=22A 1.5 V Continuous Source Current (Body Diode) (Note 1) IS 22 A Pulsed Source Current (Body Diode) ISM 88 A Reverse Recovery Time tRR 590 890 ns Reverse Recovery Charge QRR IS=22A, di/dt=100A/μs (Note 2) 7.2 11 µC Note: 1. 2. Repetitive rating; pulse width limited by max. junction temperature. Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. |
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