GaAs MESFETTransistor

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Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2008 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

CF003-01

July 2008 - Rev 15-Jul-08

Features

High Gain: 8 dB at 12 GHz

P1dB Power: 22 dBm

Wafer Qualification Procedure

Customer Wafer Selection Available

General Description

Mimix CF003-01 GaAs-based transistor is a 600 um gate

width, sub-half-micron gate length GaAs device with Silicon

Nitride passivation. The CF003-01 provides high gain and

medium output power up to 26 GHz. It is suitable for

general purpose and driver amplifier applications with up

to +22 dBm power from a single FET. The CF003-01 is

available in chip form and is suitable for airborne,

shipboard and ground-based equipment. The devices are

100% DC tested and every wafer is qualified based on

sample RF and reliability testing. Screening includes

MIL-STD-750 Class B, Class S and commercial screening.

These devices are also available in packaged form. Please

consult the CFB0301-B, CFA0301-A datasheets or contact

the factory for further information.