IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXFK 25N80

IXFK 27N80

IXFN 25N80

IXFN 27N80

V

0

5

10

15

20

25

30

35

40

100

1000

10000

V

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0

20

40

60

80

100

Gate Charge - nC

0

100

200

300

400

500

0

2

4

6

8

10

12

Vds=300V

I

I

Coss

T

V

I

I

f = 1MHz

T

Ciss

Crss

Figure 7. Gate Charge

Figure 8. Capacitance Curves

Figure 9. Forward Voltage Drop of the Intrinsic Diode

Figure 10. Transient Thermal Resistance

Pulse Width - Seconds

0.0001

0.001

0.01

0.1

1

10

0.001

0.01

0.1

1

Single pulse

D = Duty Cycle

D=0.5

D=0.1

D=0.05

D=0.02

D=0.01

D=0.2