IXFN25N80 datasheet(1/4 Pages) IXYS

Part #	IXFN25N80

Description	HiPerFET Power MOSFETs

PDF	4 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 4 page

TO-264 AA (IXFK)

S

G

D

S

G

S

G

S

D

miniBLOC, SOT-227 B (IXFN)

E153432

(TAB)

G = Gate

D = Drain

S = Source

TAB = Drain

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

Features

•

International standard packages

•

JEDEC TO-264 AA, epoxy meet

UL 94 V-0, flammability classification

•

miniBLOC, with Aluminium nitride

isolation

•

Low R

DS (on) HDMOS

TM process

•

Rugged polysilicon gate cell structure

•

Unclamped Inductive Switching (UIS)

rated

•

Low package inductance

•

Fast intrinsic Rectifier

Applications

•

DC-DC converters

•

Battery chargers

•

Switched-mode and resonant-mode

power supplies

•

DC choppers

•

Temperature and lighting controls

Advantages

•

Easy to mount

•

Space savings

•

High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 3 mA

800

V

DSS temperature coefficient

0.096

%/K

V

GH(th)

V

DS

= V

GS, ID = 8 mA

2

4.5

V

GS(th) temperature coefficient

-0.214

%/K

I

GSS

V

GS

=

±20 V

DC, VDS = 0

±200 nA

I

DSS

V

DS

= 0.8 • V

DSS

T

J =

25

°C

500

µA

V

GS

= 0 V

T

J = 125°C2

mA

R

DS(on)

V

GS

= 10 V, I

D = 0.5 • ID25

Pulse test, t

≤ 300 µs,

25N80

0.35

Ω

duty cycle d

≤ 2 %

27N80

0.30

Ω

Symbol

Test Conditions

Maximum Ratings

IXFK

IXFN

V

DSS

T

J

= 25

°C to 150°C

800

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

800

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C, Chip capability

27N80

27

A

25N80

25

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM 27N80

108

A

T

C

= 25

°C

25N80 100

100

A

I

AR

27N80

14

A

25N80

13

A

E

AR

T

C= 25°C30

30

mJ

dv/dt

I

S≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J ≤ 150°C, RG = 2 Ω

P

D

T

C

= 25

°C

500

520

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in) from case for 10 s

300

-

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

-

2500

V~

I

ISOL ≤ 1 mA

t = 1 s

-

3000

V~

M

d

Mounting torque

0.9/6

1.5/13 Nm/lb.in.

Terminal connection torque

-

1.5/13 Nm/lb.in.

Weight

10

30

g

HiPerFETTM Power MOSFETs

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

rr

95561D(6/02)

V

DSS

I

D25

R

DS(on)

IXFK 27N80

800 V

27 A

0.30

Ω

IXFK 25N80

800 V

25 A

0.35

Ω

IXFN 27N80

800 V

27 A

0.30

Ω

IXFN 25N80

800 V

25 A

0.35

Ω

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