IXFL39N90 datasheet(1/2 Pages) IXYS

Part #	IXFL39N90

Description	HiPerFET Power MOSFETs ISOPLUS264

PDF	2 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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HiPerFETTM Power MOSFETs

ISOPLUS264TM

(Electrically Isolated Backside)

Single Die MOSFET

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

rr

IXFL 39N90 V

DSS

= 900 V

I

D25

=

34 A

R

DS(on)

= 220 m

Ω

t

< ns

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 3 mA

900

V

GH(th)

V

DS = VGS, ID = 8 mA

2.5

5.0

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±200

nA

I

DSS

V

DS = VDSS

T

J =

25

°C

100

µA

V

GS = 0 V

T

J = 125°C2

mA

R

DS(on)

V

GS = 10 V, ID = IT

220 m

Ω

Notes 2, 3

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C

900

V

DGR

T

J = 25°C to 150°C; RGS = 1 MΩ

900

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C, Chip capability

34

A

I

DM

T

C = 25°C, Note 1

154

A

I

AR

T

C = 25°C39

A

E

AR

T

C = 25°C64

mJ

E

AS

T

C = 25°C4

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS

5

V/ns

T

J ≤ 150°C, RG = 2 Ω

P

D

T

C = 25°C

580

W

T

J

-40 ... +150

° C

T

JM

150

°C

T

stg

-40 ... +150

° C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

I

ISOL ≤ 1 mA

t = 1 s

3000

V~

Weight

8g

DS99094(10/03)

Preliminary Data Sheet

G

D

S

(Backside)

ISOPLUS-264TM

G = Gate

D = Drain

S = Source

Features

Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

Low drain to tab capacitance(<30pF)

Low R

DS (on) HDMOS

TM

process

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

Fast intrinsic Rectifier

Applications

DC-DC converters

Battery chargers

Switched-mode and resonant-mode

power supplies

DC choppers

AC motor control

Advantages

Easy assembly

Space savings

High power density

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