4.0-11.0 GHz GaAs MMIC

Buffer Amplifier

Excellent Transmit LO/Output Buffer Stage

Compact Size

23.0 dB Small Signal Gain

+20.0 dBm P1dB Compression Point

4.5 dB Noise Figure

Variable Gain with Adjustable Bias

100% On-Wafer RF, DC and Output Power Testing

100% Commercial-Level Visual Inspection Using

Mil-Std-883 Method 2010

Features

Chip Device Layout

Absolute Maximum Ratings

Supply Voltage (Vd)

Supply Current (Id1)

Gate Bias Voltage (Vg)

Input Power (Pin)

Storage Temperature (Tstg)

Operating Temperature (Ta)

Channel Temperature (Tch)

+4.3 VDC

180 mA

0V

+20.0 dBm

Page 1 of 9

Channel temperature affects a device's MTTF. It is

recommended to keep channel temperature as low as

possible for maximum life.

Parameter

Frequency Range (f )

Input Return Loss (S11)

Output Return Loss (S22)

Small Signal Gain (S21)

Gain Flatness ( S21)

Reverse Isolation (S12)

Noise Figure

Output Power for 1dB Compression (P1dB)

Saturated Output Power (Psat)

Drain Bias Voltage (Vd2)

Gate Bias Voltage (Vg2)

Supply Current (Id) (Vd=4.0V, Vg2=-0.5V Typical)

Units

GHz

dB

dB

dB

dB

dB

dB

dBm

dBm

VDC

VDC

mA

Min.

4.0

-

-

-

-

-

-

-

-

-

-1.0

-

Typ.

-

20.0

12.0

23.0

+/-1.5

65.0

4.5

+20.0

+21.0

+4.0

-0.35

100

Max.

11.0

-

-

-

-

-

-

-

-

+4.0

-0.1

130

(2) Measured using constant current.

2

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2009 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

B1007-BD

Mimix Broadband’s two stage 4.0-11.0 GHz GaAs

MMIC buffer amplifier has a small signal gain of 23.0

dB with a +20.0 dBm P1dB output compression point.

The device also provides variable gain regulation with

adjustable bias. This MMIC uses Mimix Broadband’s

GaAs PHEMT device model technology, and is based

upon electron beam lithography to ensure high

repeatability and uniformity. The chip has surface

passivation to protect and provide a rugged part with

backside via holes and gold metallization to allow

either a conductive epoxy or eutectic solder die

attach process. This device is well suited for

Microwave and Millimeter-wave Point-to-Point Radio,

LMDS, SATCOM and VSAT applications.

General Description

October 2009 - Rev 10-Oct-09