R5F36CAMNFB datasheet(52/99 Pages) RENESAS

52 / 99 page

R01DS0034EJ0200 Rev.2.00

Page 52 of 95

Feb 07, 2011

M16C/6C Group

5. Electrical Characteristics

5.1.6

Flash Memory Electrical Characteristics

Notes:

Set the PM17 bit in the PM1 register to 1 (one wait).

When the frequency is over this value, set the FMR17 bit in the FMR1 register to 0 (one wait) or the PM17 bit in

the PM1 register to 1 (one wait)

Set the PM17 bit in the PM1 register to 1 (one wait). When using 125 kHz on-chip oscillator clock or sub clock as

the CPU clock source, a wait is not necessary.

Notes:

Definition of program and erase cycles:

The program and erase cycles refer to the number of per-block erasures. If the program and erase cycles are n

(n = 1,000), each block can be erased n times. For example, if a block is erased after writing 2 word data 16,384

times, each to a different address, this counts as one program and erase cycles. Data cannot be written to the

same address more than once without erasing the block (rewrite prohibited).

Cycles to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).

In a system that executes multiple programming operations, the actual erasure count can be reduced by writing

to sequential addresses in turn so that as much of the block as possible is used up before performing an erase

operation. It is advisable to retain data on the erasure cycles of each block and limit the number of erase

operations to a certain number.

If an error occurs during block erase, attempt to execute the clear status register command, then execute the

block erase command at least three times until the erase error does not occur.

Customers desiring program/erase failure rate information should contact a Renesas Electronics sales office.

The data hold time includes time that the power supply is off or the clock is not supplied.

Table 5.9

CPU Clock When Operating Flash Memory (f(BCLK))

VCC1 = 2.7 to 5.5 V, Topr = -20°C to 85°C/-40°C to 85°C unless otherwise specified.

Symbol

Parameter

Conditions

Standard

Unit

Min.

Typ.

Max.

-CPU rewrite mode

10 (1)

MHz

f(SLOW_R)

Slow read mode

5 (3)

MHz

Low current consumption read mode

fC(32.768)

kHz

Data flash read

2.7 V

≤ V

CC1 ≤ 3.0 V

16 (2)

MHz

3.0 V < VCC1 ≤ 5.5 V

20 (2)

MHz

Table 5.10

Flash Memory (Program ROM 1, 2) Electrical Characteristics

VCC1 = 2.7 to 5.5 V at Topr = 0°C to 60°C, unless otherwise specified.

Symbol

Parameter

Conditions

Standard

Unit

Min.

Typ.

Max.

Program and erase cycles (1), (3), (4) VCC1 = 3.3 V, Topr = 25°C

1,000 (2)

times

2 word program time

VCC1 = 3.3 V, Topr = 25°C

150

4000

μs

Lock bit program time

VCC1 = 3.3 V, Topr = 25°C

3000

μs

Block erase time

VCC1 = 3.3 V, Topr = 25°C

0.2

3.0

Program, erase voltage

2.7

5.5

Read voltage

Topr= -20°C to 85°C/-40°C to 85°C

2.7

5.5

Program, erase temperature

°C

tPS

Flash memory circuit stabilization wait time

μs

Data hold time (6)

Ambient temperature = 55

°C20

year

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