2010-05-17

BFP460

1

1

2

3

4

NPN Silicon RF Transistor

• General purpose low noise amplifier

for low voltage, low current applications

• High ESD robustness, typical 1500V (HBM)

• Low minimum noise figure 1.1 dB at 1.8 GHz

• High linearity: output compression point

OP1dB = 13 dBm @ 3V, 35mA, 1.8GHz

• Easy to use standard package with visible leads

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD

(Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP460

ABs

1 = E 2 = C 3 = E 4=B

-

-

SOT343

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

4.5

4.2

V

Collector-emitter voltage

15

Collector-base voltage

15

Emitter-base voltage

1.5

Collector current

70

mA

Base current

7

230

mW

Junction temperature

150

°C

Ambient temperature

-65 ... 150

Storage temperature

-65 ... 150