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BFP620 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BFP620 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 11 page ![]() 2010-09-21 1 BFP620 1 2 3 4 NPN Silicon Germanium RF Transistor • Highly linear low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Based on Infineon's reliable high volume SiGe:C technology • Ideal for CDMA and WLAN applications • Collector design provides high linearity of 14.5 dBm OP1dB for low voltage application • Maximum stable gain Gms = 21.5 dB at 1.8 GHz Gma = 11 dB at 6 GHz • Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz Outstanding noise figure NFmin = 1.3 dB at 6 GHz • Accurate SPICE GP model enables effective design in process • Pb-free (RoHS compliant) package • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP620 R2s 1=B 2=E 3=C 4=E - - SOT343 |
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