BFP620 datasheet(2/11 Pages) INFINEON

2 / 11 page

2010-09-21

BFP620

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

TA > 0 °C

TA ≤ 0 °C

VCEO

2.3

2.1

Collector-emitter voltage

VCES

7.5

Collector-base voltage

VCBO

7.5

Emitter-base voltage

VEBO

1.2

Collector current

Base current

Total power dissipation1)

TS ≤ 95 °C

Ptot

185

Junction temperature

150

°C

Ambient temperature

-65 ... 150

Storage temperature

TStg

-65 ... 150

1TS is measured on the emitter lead at the soldering point to pcb

Thermal Resistance

Parameter

Symbol

Value

Unit

Junction - soldering point1)

RthJS

≤ 300

K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR)CEO 2.3

2.8

Collector-emitter cutoff current

VCE = 7.5 V, VBE = 0

VCE = 5 V, VBE = 0

ICES

0.001

0.04

µA

Collector-base cutoff current

VCB = 5 V, IE = 0

ICBO

Emitter-base cutoff current

VEB = 0.5 V, IC = 0

IEBO

900

DC current gain

IC = 50 mA, VCE = 1.5 V, pulse measured

hFE

110

180

270

1For calculation of RthJA please refer to Application Note AN077 Thermal Resistance

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