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LPC2212 Datasheet(PDF) 39 Page - NXP Semiconductors |
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LPC2212 Datasheet(HTML) 39 Page - NXP Semiconductors |
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39 / 47 page ![]() LPC2212_2214 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 14 June 2011 39 of 47 NXP Semiconductors LPC2212/2214 Single-chip 16/32-bit ARM microcontrollers [1] Except on initial access, in which case the address is set up Tcy(CCLK) earlier. [2] Tcy(CCLK) = 1⁄CCLK. [3] Latest of address valid, CS LOW, OE LOW to data valid. [4] Address valid to data valid. [5] Earliest of CS HIGH, OE HIGH, address change to data invalid. [1] See the LPC2114/2124/2212/2214 User Manual for a description of the WSTn bits. tBLSHDNV BLS HIGH to data invalid time [2] (2 T cy(CCLK)) 5- (2 T cy(CCLK))+5 ns tCHDV XCLK HIGH to data valid time -- 10 ns tCHWEL XCLK HIGH to WE LOW time -- 10 ns tCHBLSL XCLK HIGH to BLS LOW time -- 10 ns tCHWEH XCLK HIGH to WE HIGH time -- 10 ns tCHBLSH XCLK HIGH to BLS HIGH time -- 10 ns tCHDNV XCLK HIGH to data invalid time -- 10 ns Table 10. External memory interface dynamic characteristics …continued CL =25 pF; Tamb =40 C. Symbol Parameter Conditions Min Typ Max Unit Table 11. Standard read access specifications Access cycle Max frequency WST[1] setting WST 0; round up to integer Memory access time requirement standard read standard write burst read - initial burst read - subsequent 3 N/A f MAX 2WST1 + t RAM 20 ns + -------------------------------- WST1 t RAM 20 ns + t cy CCLK -------------------------------- 2 – t RAM t cy CCLK 2WST1 + 20 ns – f MAX 1WST2 + t WRITE 5 ns + ---------------------------------- WST2 t WRITE t CYC 5 + – t cy CCLK ------------------------------------------- t WRITE t cy CCLK 1WST2 + 5 ns – f MAX 2WST1 + t INIT 20 ns + -------------------------------- WST1 t INIT 20 ns + t cy CCLK -------------------------------- 2 – t INIT t cy CCLK 2WST1 + 20 ns – f MAX 1 t ROM 20 ns + --------------------------------- t ROM t cy CCLK 20 ns – |
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