2N6798 datasheet(2/2 Pages) SEME-LAB

2 / 2 page

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain–Source Breakdown Voltage

VGS(th)

Gate Thresshold Voltage

IGSS

Gate–Body Leakage

ID(on)

On-State Drain Current 1

IDSS

Zero Gate Voltage Drain Current

rDS(on)

Drain–Source On–Resistance1

gfs

Forward Transconductance1

Ciss

Input Capacitance

Coss

Output capacitance

Crss

Reverse Transfer Capacitance

tdon

Turn–On Delay Time

RiseTime

td(of)

Turn off Delay Time

FallTime

VSD

Diode Forward Voltage1

Continues Current

ISM

Pulsed Current2

trr

Reverse Recovery Time

Qrr

Reverse Recovered Charge

VGS = 0

ID = 1000mA

VDS=VGS

ID = 250mA

VDS = 0

VGS = ±20V

VDS = 2.2

VGS = 10V

VDS =0.8 x V(BR)DSS

VGS = 0

Tj = 125°C

VGS = 10V

ID = 3.5A

VDS = 5V

ID = 3.5A

VDS = 25V

VGS = 0

f = 1.0MHZ

VDD = 77V

RL = 22

ID = 3.5A

VGEN = 10V

RG = 7.5 ohms

IF = IS

VGS = 0

IF = IS

dIF/DT = 100A/mS

200

2.0

4.0

100

5.5

250

0.25

4.0

2.5

3.0

600

250

1.4

5.5

150

500

É)

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E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

Prelim. 6/99

2N6798

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)

1) Pulse test : Pulse Width < 300

ms ,Duty Cycle < 2%

2) Pulse width limited by maximum juction temperature

SOURCE DRAIN DIODE RATING CHARACTERISTICS

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