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2N7085 Datasheet(PDF) 2 Page - Seme LAB |
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2N7085 Datasheet(HTML) 2 Page - Seme LAB |
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2 / 2 page ![]() Parameter Min. Typ. Max. Unit RthJC Thermal resistance Junction-Case 2.1 RthJA Thermal resistance Junction-ambient 80 °C/W RthCS Thermal resistance Case to Sink 1.0 2N7085 Prelim. 7/99 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 ID = 250µA VDS = VGS ID = 250µA VDS = 0 VGS = ±20V VDS = 80V VGS = 0 TJ = 125°C VDS = 10V VGS = 10V VGS = 10V ID = 12A TJ = 125°C VDS = 15V IDS = 12A VGS = 0 VDS = 25V f = 1MHz VDS = 0.5 x V(BR)DSS50V VGS = 10V ID = 20A VDD = 50V ID = 20A VGEN =10V RL = 2.5W RG = 4.7W IF = 20A VGS = 0 IF = 20A di/dt = 100A/µs ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) THERMAL RESISTANCECHARACTERISTICS Drain–Source Breakdown Voltage Gate Threshold Voltage Gate – Body Leakage Zero Gate Voltage Drain Current On–State Drain Current1 Drain – Source On–State Resistance 1 Forward Transconductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge2 Gate Source Charge2 Gate Drain Charge2 Turn–On Delay Time2 Rise Time2 Turn–Off Delay Time2 Fall Time2 Continuous Current Pulsed Current Diode Forward Voltage1 Reverse Recovery Time Reverse Recovery Charge 100 24 ±100 25 250 20 0.06 0.075 0.11 0.14 5.0 8.0 1400 480 110 35 50 10 20 18 25 13 30 85 120 35 80 75 95 20 80 2.5 150 400 0.5 V V nA µA A W S pF nC ns A V ns µC V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr STATIC ELECTRICAL RATINGS DYNAMIC CHARACTERISTICS SOURCE – DRAIN DIODE CHARACTERISTICS 1 Pulse test : Pulse Width < 300 ms ,Duty Cycle < 2% 2 Independent of Operating Temperature |
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