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2N6716 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2N6716 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  2N6716 / 2N6717 / 2N6718 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 18-Jan-2011 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector A C E K F D B G H J RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High Voltage：VCEO = 100V Gain of 20 @ IC = 0.5A ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage 2N6716 VCBO 60 V 2N6717 80 2N6718 100 Collector to Emitter Voltage 2N6716 VCEO 60 V 2N6717 80 2N6718 100 Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 1 A Collector Power Dissipation PD 1 W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage 2N6716 V(BR)CBO 60 - - V IC=100μA, IE=0 2N6717 80 - - 2N6718 100 - - Collector to Emitter Breakdown Voltage 2N6716 V(BR)CEO 60 - - V IC=1mA, IB=0 2N6717 80 - - 2N6718 100 - - Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=1mA, IC=0 Collector Cut-Off Current 2N6716 ICBO - - 1 μA VCB=60V, IE=0 2N6717 - - VCB=80V, IE=0 2N6718 - - VCB=100V, IE=0 Emitter Cut-Off Current 2N6716 IEBO - - 1 μA VEB=5V, IC=0 2N6717 - - 2N6718 - - DC Current Gain hFE (1)* 80 - - VCE=1V, IC=50mA hFE (2)* 50 - 250 VCE=1V, IC=250mA hFE (3)* 20 - - VCE=1V, IC=500mA Emitter Base Collector TO-92 REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 |
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