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2N7002T Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # 2N7002T
Description  N-Channel Enhancement MOSFET
PDF  3 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

2N7002T Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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2N7002T
N-Channel Enhancement MOSFET
Elektronische Bauelemente
10-Jun-2010 Rev. B
Page 1 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
DEVICE MARKING：K72
MAXIMUM RATINGS (TA=25℃ unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDS
60
V
Drain Current
ID
115
mA
Power Dissipation
PD
150
mW
Operating Junction Temperature Range
TJ
150
°C
Operating Storage Temperature Range
TSTG
-55~150
°C
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
1.50
1.70
K
0.30
0.50
B
0.75
0.95
M
---
10
o
C
0.60
0.80
N
---
10
o
D
0.23
0.33
S
1.50
1.70
G
0.50BSC
J
0.10
0.20
SOT-523

Gate

Source

Drain


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