2N7002T datasheet(2/3 Pages) SECOS

2 / 3 page

2N7002T

N-Channel Enhancement MOSFET

Elektronische Bauelemente

10-Jun-2010 Rev. B

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

CHARACTERISTICS

SYMBOL MIN TYP MAX UNIT

TEST CONDITIONS

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 10μA

Gate Threshold Voltage

VGS(th)

2.5

VDS= VGS, ID= 250μA

Gate-Body Leakage

IGSS

±80

VDS= 0V, VGS= ±25V

Zero Gate Voltage Drain Current

IDSS

VDS = 60V, VGS= 0V

On-State Drain Current

ID(ON)

500

VGS = 10V, VDS = 7V

Drain-Source On Resistance

RDS(ON)

7.5

Ω

VGS= 10V, ID = 500mA

7.5

VGS= 5V, ID = 50mA

Forward transfer admittance

gfs

500

VDS= 10V, ID = 200mA

Drain-Source On Voltage

VDS(ON)

0.5

3.75

VGS = 10V, ID = 500mA

0.05

0.375

VGS = 5V, ID = 50mA

Diode Forward Voltage

VSD

0.55

1.2

IS= 115mA, VGS= 0V

Input Capacitance

Ciss

VDS= 25V, VGS= 0V, f= 1MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

SWITCHING TIME

Turn-On Time

Td(ON)

VGEN= 10V, VDD= 25V,

ID= 500mA, RG= 25Ω,

RL= 50Ω

Turn-Off Time

Td(OFF)

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