ARF475FL datasheet(1/4 Pages) MICROSEMI

Part #	ARF475FL

Description	RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

Logo

1 / 4 page

MAXIMUM RATINGS

All Ratings: T

C = 25°C unless otherwise speciﬁed.

STATIC ELECTRICAL CHARACTERISTICS (each device)

Symbol

BV

DSS

V

DS(ON)

I

DSS

I

GSS

g

fs

g

fs1

/ gfs2

V

GS(TH)

DV

GS(TH)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS = 0V, ID = 250 μA)

On State Drain Voltage 1 (I

D(ON) = 5A, VGS = 10V)

Zero Gate Voltage Drain Current (V

DS = VDSS, VGS = 0V)

Zero Gate Voltage Drain Current (V

DS = 50V, VGS = 0, TC = 125°C)

Gate-Source Leakage Current (V

GS = ±30V, VDS = 0V)

Forward Transconductance (V

DS = 15V, ID = 5A)

Forward Transconductance Match Ratio (V

DS = 15V, ID = 5A)

Gate Threshold Voltage (V

DS = VGS, ID = 200mA)

Gate Threshold Voltage Match (V

DS = VGS, ID = 200mA)

MIN

TYP

MAX

500

2.9

4

100

500

±100

3

3.6

0.9

1.1

2

3.3

4

0.2

UNIT

Volts

μA

nA

mhos

Volts

Symbol

V

DSS

V

DGO

I

D

V

GS

P

D

T

J,TSTG

T

L

Parameter

Drain-Source Voltage

Drain-Gate Voltage

Continuous Drain Current @ T

C = 25°C

(each device)

Gate-Source Voltage

Total Device Dissipation @ T

C = 25°C

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

ARF475FL

500

10

±30

910

-55 to 175

300

UNIT

Volts

Amps

Volts

Watts

°C

RF POWER MOSFET

N - CHANNEL PUSH - PULL PAIR

165V

450W

150MHz

The ARF475FL is a matched pair of RF power transistors in a common source conﬁguration. It is designed for high

voltage push-pull or parallel operation in narrow band ISM and MRI power ampliﬁers up to 150 MHz.

• Speciﬁed 150 Volt, 128 MHz Characteristics:

•

Output Power = 900 Watts Peak

•

Gain = 15dB (Class AB)

•

Efﬁciency = 50% min

• High Performance Push-Pull RF Package.

• High Voltage Breakdown and Large SOA

for Superior Ruggedness.

• Low Thermal Resistance.

• RoHS Compliant *

ARF475FL

Common Source

Push-Pull Pair

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θJHS

Characteristic

Junction to Case

Junction to Sink (Use High Efﬁciency Thermal Grease and Planar Heat Sink Surface.)

MIN

TYP

MAX

0.15

0.165

0.30

0.33

UNIT

°C/W

G

D

S

D

Microsemi Website - http://www.microsemi.com

*Pb Free Terminal Finish.

Similar Part No. - ARF475FL

Manufacturer	Part #	Datasheet	Description
Advanced Power Technolo...	ARF475FL	95Kb / 4P	RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Microsemi Corporation	ARF475FL	485Kb / 4P	RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR

More results

Similar Description - ARF475FL

Manufacturer	Part #	Datasheet	Description
Tyco Electronics	MRF392	165Kb / 4P	Tthe RF Line NPN Silicon Push-Pull RF Power Transistor
Tyco Electronics	MRF393	138Kb / 4P	The RF Line NPN Silicon Push-Pull RF Power Transistor
Microsemi Corporation	ARF475FL	485Kb / 4P	RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR
	ARF476FL	189Kb / 4P	RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR
	ARF477FL	159Kb / 4P	RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR
	DRF1301	176Kb / 4P	MOSFET Push-Pull Hybrid
	ARF476FL	156Kb / 4P	RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR
	ARF477FL	151Kb / 4P	RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR
	DRF1301	280Kb / 4P	MOSFET Push-Pull Hybrid
New Jersey Semi-Conduct...	MRF393	93Kb / 2P	NPN Silicon Push-Pull RF Power TVansistor

More results

ARF475FL Datasheet(PDF) 1 Page - Microsemi Corporation

ARF475FL Datasheet(HTML) 1 Page - Microsemi Corporation

Similar Part No. - ARF475FL

Similar Description - ARF475FL

Html Pages

1 2 3 4

Datasheet Download

Link URL