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MMBT589 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MMBT589 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  Any changing of specification will not be informed individual MMBT589 PNP Silicon General Purpose Transistor Collector 3 1 Base 2 Emitter Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 K J C H L A B S G V 3 1 2 D Top View http://www.SeCoSGmbH.com Elektronische Bauelemente 1 2 3 FEATURES MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -2 A PD Total Device Dissipation 310 mW RθJA Thermal Resistance,junction to Ambient 403 ℃/W TJ, Tstg Junction and Storage Temperature -55-150 ℃ MARKING :589 ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100µA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO Ic=-10mA,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 µA Collector-emitter cut-off current ICES VCES=-30V -0.1 µA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 µA hFE1 VCE=-2V,IC=-1mA 100 hFE2 VCE=-2V,IC=-500mA 100 300 hFE3 VCE=-2V,IC=-1A 80 DC current gain hFE4 VCE=-2V,IC=-2A 40 VCE(sat)1 IC= -500mA, IB=-50 mA -0.25 V VCE(sat)2 IC= -1A, IB=-100 mA -0.3 V Collector-emitter saturation voltage VCE(sat)3 IC= -2A, IB=-200 mA -0.65 V Base-emitter saturation voltage VBE(sat) IC= -1A, IB=-100 mA -1.2 V Base-emitter Turn-on voltage VBE(on) VCE=-2V, IC=-1A -1.1 V Transition frequency fT VCE=-5V, IC=-100 mA , f =100MHz 100 MHz Collector Output Capacitance Cob f=1MHZ 15 pF 01-Jun-2002 Rev. A Page 1 of 3 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
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