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MMDT5451 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # MMDT5451
Description  Plastic-Encapsulated Transistor
PDF  4 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

MMDT5451 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
MMDT5451
0.2 W, 200 mA, 180 V
Plastic-Encapsulated Transistor (Dual)
28-Oct-2009 Rev. B
Page 2 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
NPN5551 ELECTRICAL CHARACTERISTICS at Ta = 25°C
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
TEST CONDITIONS
Collector-base breakdown voltage
V(BR)CBO
180
-
V
IC=100µA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO
160
-
V
IC=1mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO
6
-
V
IE=10µA,IC=0
Collector cut-off current
ICBO
-
0.05
µA
VCB=120V, IE=0
Emitter cut-off current
IEBO
-
0.05
µA
VEB=4V, IC=0
hFE(1)
80
-
VCE=5V,IC=1mA
hFE(2)
80
250
VCE=5V,IC=10mA
DC current gain
hFE(3)
30
-
VCE=5V,IC=50mA
VCE(sat)1
-
0.15
V
IC=10mA, IB=1mA
Collector-emitter saturation voltage
VCE(sat)2
-
0.2
V
IC=50mA, IB=5mA
VBE(sat)1
-
1
V
IC=10mA, IB=1mA
Base-emitter saturation voltage
VBE(sat)2
-
1
V
IC=50mA, IB=5mA
Transition frequency
f T
100
300
MHz
VCE = 10V, IC = 10mA, f = 100MHz
Output Capacitance
COB
-
6.0
pF
VCB = 10V, f = 1.0MHz, IE = 0
Noise Figure
NF
-
8.0
dB
VCE= 5.0V, IC = 200µA,
RS = 1.0k ,f = 1.0kHz
PNP5401 ELECTRICAL CHARACTERISTICS at Ta = 25°C
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
TEST CONDITIONS
Collector-base breakdown voltage
V(BR)CBO
-160
-
V
IC=-100µA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO
-150
-
V
IC=-1mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO
-5
-
V
IE=-10µA,IC=0
Collector cut-off current
ICBO
-
-50
nA
VCB=-120V, IE=0
Emitter cut-off current
IEBO
-
-50
nA
VEB=-3V, IC=0
hFE(1)
50
-
VCE=-5V,IC=-1mA
hFE(2)
60
240
VCE=-5V,IC=-10mA
DC current gain
hFE(3)
50
-
VCE=-5V,IC=-50mA
VCE(sat)1
-
-0.2
V
IC=-10mA, IB=-1mA
Collector-emitter saturation voltage
VCE(sat)2
-
-0.5
V
IC=-50mA, IB=-5mA
VBE(sat)1
-
-1
V
IC=-10mA, IB=-1mA
Base-emitter saturation voltage
VBE(sat)2
-
-1
V
IC=-50mA, IB=-5mA
Transition frequency
f T
100
300
MHz
VCE = -10V, IC = -10mA, f = 100MHz
Output Capacitance
COB
-
6.0
pF
VCB = -10V, f = 1.0MHz, IE = 0
Noise Figure
NF
-
8.0
dB
VCE= -5.0V, IC = -200µA,
RS = 10
, f = 1.0kHz



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