IRF450

Prelim. 10/99

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

500

0.78

0.4

0.5

2

4

5.5

25

250

100

–100

2700

600

240

55

120

5

19

27

70

35

190

170

130

12

48

1.7

1600

14

Negligible

5.0

13

1.0

0.12

30

Reference to 25°C

f = 1MHz

Drain – Source Breakdown Voltage

Temperature Coefficient of

Breakdown Voltage

Static Drain – Source On–State

Gate Threshold Voltage

Zero Gate Voltage Drain Current

Forward Gate – Source Leakage

Reverse Gate – Source Leakage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate – Source Charge

Gate – Drain (“Miller”) Charge

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Continuous Source Current

Reverse Recovery Time

Forward Turn–On Time

V

V/ °C

W

V

S (

É)

mA

nA

pF

nC

ns

A

V

ns

mC

nH

°C/W

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width

£ 300ms, d £ 2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Thermal Resistance Junction – Case

Thermal Resistance Case – Sink

Thermal Resistance Junction – Ambient

PACKAGE CHARACTERISTICS

THERMAL CHARACTERISTICS