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SSG4463P Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4463P Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  Elektronische Bauelemente SSG4463P P-Ch Enhancement Mode Power MOSFET -13.4A, -20V, RDS(ON) 11.5 m 01-May-2011 Rev. C Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Miniature SOP-8 surface mount package saves board space. High power and current handling capability. APPLICATION PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. PACKAGE INFORMATION Package MPQ Leader Size SOP-8 2.5K 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V TA = 25°C -13.4 A Continuous Drain Current 1 TA = 70°C ID -8.4 A Pulsed Drain Current 2 IDM ±50 A Continuous Source Current (Diode Conduction) 1 IS -2.1 A TA = 25°C 3.1 W Total Power Dissipation 1 TA = 70°C PD 2.0 W Operating Junction & Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Rating Thermal Resistance Junction-Case (Max.) 1 t ≦ 5 sec RθJC 25 °C / W Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 5 sec RθJA 40 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. SOP-8 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45° D 0° 8° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. A H B M D C J K F L E N G S S S G D D D D |
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