SSG4463P datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSG4463P

P-Ch Enhancement Mode Power MOSFET

-13.4A, -20V, RDS(ON) 11.5 m

01-May-2011 Rev. C

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate Threshold Voltage

VGS(th)

-0.7

VDS=VGS, ID= -250μA

Gate-Body Leakage

IGSS

±100

VDS=0, VGS= ±12V

-1

VDS= -16V, VGS=0

Zero Gate Voltage Drain Current

IDSS

-5

μA

VDS= -16V, VGS=0, TJ=55°C

On-State Drain Current

ID(on)

-50

VDS= -4.5V, VGS= -10V

11.5

VGS= -4.5V, ID= -11.5A

VGS= -2.5V, ID= -10.4A

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS= -1.8V, ID= -7.7A

Forward Transconductance

gfs

VDS= -15V, ID= -11.5A

Diode Forward Voltage

VSD

-0.6

IS= -2.5A, VGS=0

Dynamic

Total Gate Charge

33.4

Gate-Source Charge

Qgs

5.9

Gate-Drain Charge

Qgd

8.1

ID= -11.5A

VDS= -10V

VGS= -4.5V

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

289

Fall Time

134

VDD= -10V

ID= -1A

VGEN= -4.5V

RL= 6Ω

Notes:

Pulse test：PW ≦ 300μs duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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