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SSG4902N Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SSG4902N
Description  Dual N-Channel Mode Power MOSFET
PDF  2 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSG4902N Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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SSG4902N
6.4 A, 60 V, RDS(ON) 35 m
Dual N-Channel Mode Power MOSFET
Elektronische Bauelemente
26-Nov-2010 Rev. A
Page 2 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (T
A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
STATIC
Gate Threshold Voltage
VGS(th)
1
-
-
V
VDS= VGS, ID= 250μA
Gate-Body Leakage Current
IGSS
-
-
±100
nA
VDS= 0V, VGS= ±20V
Zero Gate Voltage Drain Current
IDSS
-
-
1
μA
VDS= 60V, VGS= 0V
-
-
10
μA
VDS= 60V, VGS= 0V, TJ= 55°C
On-State Drain Current
1
ID(on)
20
-
-
A
VDS= 5V, VGS= 10V
Drain-Source On-Resistance
1
RDS(ON)
-
-
35
mΩ
VGS= 10V, ID= 6.4A
-
-
45
VGS= 4.5V, ID= 5.6A
Forward Transconductance
1
gfs
-
11
-
S
VDS= 15V, ID= 6.4A
Diode Forward Voltage
VSD
-
-
1.2
V
IS= 2.0A, VGS= 0V
DYNAMIC
2
Total Gate Charge
Qg
-
12.5
-
nC
ID= 6.4A
VDS= 30V
VGS= 4.5V
Gate-Source Charge
Qgs
-
2.4
-
Gate-Drain Charge
Qgd
-
2.6
-
SWITCHING
Turn-On Delay Time
Td(on)
-
11
-
nS
VDD= 30V
ID= 1A
VGEN= 10V
RL= 30Ω
Rise Time
Tr
-
8
-
Turn-Off Delay Time
Td(off)
-
19
-
Fall Time
Tf
-
6
-
Notes
1
Pulse test：PW ≦ 300
μs duty cycle ≦ 2%.
2
Guaranteed by design, not subject to production testing.



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