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SSG5509A Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG5509A Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 7 page  SSG5509A N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.1 A, 30 V, RDS(ON) 30 mΩ Ω Ω Ω P-Ch: -4.8 A, -30 V, RDS(ON) 55 mΩ Ω Ω Ω Elektronische Bauelemente 27-Jun-2011 Rev. A Page 1 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SOP-8 A H B M D C J K F L E N G = Date Code 5509ASS RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG5509A uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Lower Gate Charge RoHS Compliant MARKING CODE PACKAGE INFORMATION Package MPQ Leader Size SOP-8 3K 13 inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit N-Ch P-Ch Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±12 ±12 V Continuous Drain Current 3 TA=25℃ ℃ ℃ ℃ ID 6.1 -4.8 A TA=70℃ ℃ ℃ ℃ 4.9 -3.8 A Pulsed Drain Current 1 IDM 30 -30 A Total Power Dissipation PD 2 W Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Linear Derating Factor 0.016 W / °C Thermal Resistance Ratings Maximum Thermal Resistance Junction-ambient 3 RθJA 62.5 °C / W REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45° D 0° 8° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. |
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