SSG5509A datasheet(2/7 Pages) SECOS

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SSG5509A

N & P-Ch Enhancement Mode Power MOSFET

N-Ch: 6.1 A, 30 V, RDS(ON) 30 mΩ

Ω

P-Ch: -4.8 A, -30 V, RDS(ON) 55 mΩ

Ω

Elektronische Bauelemente

27-Jun-2011 Rev. A

Page 2 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

N-CHANNEL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

VGS=0, ID=250µA

Gate Threshold Voltage

VGS(th)

0.5

1.2

VDS=VGS, ID=250µA

Forward Transconductance

gfs

VDS=5V, ID=5A

Gate-Source Leakage Current

IGSS

±100

VGS= ±12V

Drain-Source Leakage Current(TJ =25℃

℃

℃)

IDSS

µA

VDS=24V, VGS=0

Drain-Source Leakage Current(TJ =70℃

℃

℃)

µA

VDS=24V, VGS=0

Static Drain-Source On-Resistance

RDS(ON)

VGS=10V, ID=5.8A

VGS=4.5V, ID=5A

VGS=2.5V, ID=4A

Total Gate Charge

9.7

ID=5.8A

VDS=15V

VGS=4.5V

Gate-Source Charge

Qgs

1.6

Gate-Drain (“Miller”) Change

Qgd

3.1

Turn-on Delay Time

Td(on)

3.3

VDS=15V

VGS=10V

RG=3

RL=2.7

Rise Time

4.8

Turn-off Delay Time

Td(off)

26.3

Fall Time

4.1

Input Capacitance

Ciss

823

VGS=0

VDS=15V

f=1.0 MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Source -Drain Diode

Forward On Voltage

VSD

1.0

IS=1A, VGS=0

Reverse Recovery Time

Trr

IS=5A, VGS=0,

dl/dt =100A/µs

Reverse Recovery Charge

Qrr

8.9

Continuous Source Current (Body Diode)

2.5

VD=VG=0, VS=1.0V

Notes:

1. Pulse width limited by Max. junction temperature.

2. Pulse width≦300us, duty cycle≦2%.

3. Surface mounted on 1 in

2 copper pad of FR4 board; 135 °C/W when mounted on Min. copper pad.

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