KTC2875 datasheet(1/3 Pages) KEC

Part #	KTC2875

Description	EPITAXIAL PLANAR NPN TRANSISTOR

PDF	3 Pages

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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1 / 3 page

2009. 3. 12

1/3

SEMICONDUCTOR

TECHNICAL DATA

KTC2875

Revision No : 3

FOR MUTING AND SWITCHING APPLICATION.

FEATURES

・High Emitter-Base Voltage : V

EBO=25V(Min.)

・High Reverse h

FE

: Reverse hFE=150(Typ.) (VCE=-2V, IC=-2mA)

・Low on Resistance : R

ON=1Ω(Typ.), (IB=5mA)

MAXIMUM RATING (Ta=25℃)

DIM

MILLIMETERS

1. EMITTER

2. BASE

3. COLLECTOR

SOT-23

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

0.45+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

PP

P7

+_

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Note : hFE Classification

A: 200~700,

B: 350～1200

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

20

V

Emitter-Base Voltage

VEBO

25

V

Collector Current

IC

300

mA

Base Current

IB

60

mA

Collector Power Dissipation

PC

150

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=50V, IE=0

-

0.1

μA

Emitter Cut-off Current

IEBO

VEB=25V, IC=0

-

0.1

μA

DC Current Gain (Note)

hFE

VCE=2V, IC=4mA

200

-

1200

Collector-Emitter Saturation Voltage

VCE(sat)

IC=30mA, IB=3mA

-

0.042

0.3

V

Base-Emitter Voltage

VBE

VCE=2V, IC=4mA

-

0.61

-

V

Transition Frequency

fT

VCE=6V, IC=4mA

-

30

-

MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

-

4.8

7

pF

Switching

Time

Turn-on Time

ton

4k

Ω

10V

CC

V

=12V

BB

V

=-3V

1µs

2%

OUTPUT

DUTY CYCLE

INPUT

<=

-

160

-

nS

Storage Time

tstg

-

500

-

Fall Time

tf

-

130

-

h

Rank

Type Name

Marking

Lot No.

M

FE

EPITAXIAL PLANAR NPN TRANSISTOR

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