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SID3055 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # SID3055
Description  N-Channel Enhancement Mode Power Mos.FET
PDF  6 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SID3055 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Description
The TO-251 is universally preferred for all commercial-industrial
surface mount applications and
suited for low voltage applications
such as DC/DC converters.
S
D
G
Elektronische Bauelemente
SID3055
15A, 30V,RDS(ON)80m
N-Channel Enhancement Mode Power Mos.FET
Ω
Absolute Maximum Ratings
Drain-Source Voltage
0.22
50
15
9
28
-55~+150
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
Pulsed Drain Current
Total Power Dissipation
ID@TC=100
ID@TC=25
IDM
PD@TC=25
1
C
o
C
o
C
o
W/ C
C
o
o
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-case
/W
C
Rthj-c
4.5
62
Thermal Resistance Junction-ambient
/W
C
Rthj-a
Max.
Max.
o
o
Gate-Source Voltage
Parameter
Symbol
Ratings
Unit
A
V
V
A
A
W
VDS
VGS
30
± 20
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
6
G
D
S
5.3±0.2
6.6±0.2
7.0±0.2
5.6±0.2
7.0±0.2
0.75±0.15
0.5±0.05
2.3±0.1
1.2±0.3
0.5±0.1
0.6±0.1
2.3REF.
TO-251
Dimensions in millimeters
Marking Code: 3055
XXXX(Date Code)
RoHS Compliant Product


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