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SID3055 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SID3055
Description  N-Channel Enhancement Mode Power Mos.FET
PDF  6 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SID3055 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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-Jun-2002 Rev. A
Page 2 of 6
01
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Electrical Characteristics( Tj=25 C Unless otherwise specified)
o
Notes:
2.
Pulse width limited by safe operating area.
Pulse width 300us, dutycycle 2%.
≦
≦
1.
Total Gate Charge
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
5.4
1.3
3.6
3.6
19.8
13
3.2
260
144
13
nC
nS
pF
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
VGS=0V
VDS=25V
f=1.0MHz
VDD=15V
ID=8A
VGS=10V
RG=3.4
RD=1.9
Ω
Ω
ID=8 A
VDS=24V
VGS= 5V
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
IDSS
30
0.037
1.0
3.0
100
25
250
16.5
25
±
V
V/
Reference to 25C, ID=1mA
o
oC
V
nA
uA
uA
m
oC
oC
2
2
Source-Drain Diode
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current(Tj=150 )
VGS(th)
IGSS
Ω
VGS=10V, ID=28A
VGS=4.5V, ID=22A
VGS=0V, ID=250uA
VGS= 20V
±
VDS=30V,VGS=0
VDS=24V,VGS=0
VDS=VGS, ID=250uA
_
_
_
_
_
_
_
_
_
_
_
_
_
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
Continuous Source Current(Body Diode)
IS
_
Pulsed Source Current(Body Diode)
_
ISM
A
A
VD=VG=0V,VS=1.3 V
15
50
VSD
_
_
IS=15 A, VGS=0V.Tj=25C
V
1.3
o
2
1
_
_
RDS(ON)
14.5
21.5
Elektronische Bauelemente
SID3055
15A, 30V,RDS(ON)80m
N-Channel Enhancement Mode Power Mos.FET
Ω



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