SID9575 datasheet(2/4 Pages) SECOS

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SID9575

-15A , -60V , RDS(ON) 90 mΩ

Ω

P-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

12-May-2011 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

-60

VGS=0, ID = -250µA

Breakdown

Voltage

Temperature

Coefficient

∆BVDSS / ∆TJ

-0.06

V / °C

Reference to 25°C, I D = -1mA

Gate Threshold Voltage

VGS(th)

-1

-3

VDS=VGS, ID= -250 µA

Forward Trans-conductance

gfs

VDS = -10V, ID = -9A

Gate-Source Leakage Current

IGSS

±100

VGS= ±25V

Drain-Source

Leakage

Current

TJ=25℃

IDSS

-1

VDS= -60 V, VGS=0

TJ=150℃

-25

VDS= -48 V, VGS=0

Static Drain-Source On-Resistance

RDS(ON)

VGS= -10 V, ID= -12A

120

VGS= -4.5 V, ID= -9 A

Total Gate Charge

ID= -9 A

VDS= -48 V

VGS= -4.5 V

Gate-Source Charge

Qgs

Gate-Drain (“Miller”) Charge

Qgd

Turn-on Delay Time

Td(on)

VDS= -30 V

ID= -9 A

VGS= -10 V

RG=3.3 Ω

RD=3.3 Ω

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

Input Capacitance

Ciss

1660

2660

VGS=0

VDS= -25V

f =1 MHz

Output Capacitance

Coss

160

Reverse Transfer Capacitance

Crss

100

Source-Drain Diode

Forward On Voltage

VSD

-1.2

IS= -9A, VGS=0

Reverse Recovery Time

Trr

IS= -9 A, VGS=0

dl/dt=100A / µs

Reverse Recovery Charge

Qrr

159

Notes:

Pulse width limited by safe operating area.

Pulse width≦300us, duty cycle≦2%

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