Elektronische Bauelemente

SST3585

3.5A, 20V,RDS(ON)75m

N And P-Channel Enhancement Mode Power Mos.FET

Description

The SST3585 provide the designer with best combination of fast

switching,low on-resistance and cost effectiveness.

* Low On-resistance

Features

* RoHS Compliant

* Low Gate Charge

The SOT-26 package is universally used for all commercial-industrial

surface mount applications.

15-Jun-2010 Rev. C

Page 1 of 7

T

otal Power Dissipation

Li

near Derating Factor

O

perating Junction and Storage Temperature Range

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Continuous Drain Current

Pulsed Drain Current

Parameter

Symbol

Ratings

Unit

Thermal Data

Parameter

Symbo

Ratings

Unit

Thermal Resistance Junction-ambient

A

V

V

A

A

/W

C

W/ C

C

W

Tj, Tstg

Rthj-a

20

±12

10

3.5

2.8

1.14

0.01

-55~+150

110

-20

±12

-10

-2.5

-1.97

3

3

1

o

o

o

C

o

C

o

3

Max.

Ω

Absolute Maximum Ratings

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

3 5 8 5

Date Code

1

5

2

3

4

6

D1

G1

G2

S1

D2

S2

Dimensions in millimeters

2.60

3.00

0.30

0.55

2.70

3.10

0

0.7

1.45

1.40

1.80

o

10

o

SOT-26