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SST3585 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SST3585
Description  N And P-Channel Enhancement Mode Power Mos.FET
PDF  7 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SST3585 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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N-Channel Electrical Characteristics( Tj=25
Unless otherwise specified)
Total Gate Charge
RDS(ON)
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current (Tj=70 )
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
20
0.02
0.5
1.2
100
1
10
75
125
4
0.7
2
6
8
10
3
370
55
40
±
V
V/
V
nA
uA
uA
m
nC
nS
pF
Ω
VGS=0V
VDS=20V
f=1.0MHz
VDS=15V
ID=1A
VGS=5V
RG=3.3
RD=15
Ω
Ω
ID=3A
VDS=16V
VGS=4.5V
VGS=4.5V, ID=3.5A
VGS=2.5V, ID=1.2A
VGS=0V, ID=250uA
VGS=
V
±
VDS=20V,VGS=0
VDS=16V,VGS=0
VDS=VGS, ID=250uA
Reference to 25 , ID=-1mA
_
_
_
Source-Drain Diode
_
_
_
_
_
_
_
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
VDS
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
IS=1.2A , VGS=0V.
V
1.2
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
≦
≦
Forward Transconductance
Gfs
S
7
VDS=5V, ID=3A
_
_
_
230
7
Reverse Recovery Time
Reverse Recovery Charge
Is=3A, VGS=0V
_
_
_
_
Trr
Qrr
nC
nS
16
8
3.Surface mounted on 1 in2 copper pad of FR4 board; 1
O
C/W when mounted on Min. copper pad.
_
dl/dt=100A/us
oC
oC
oC
oC
oC
12
2
2
2
2
≦
5sec;180
Gate Resistance
Rg
1.1
_
1.7
Ω
f=1.0MHz
15-Jun-2010 Rev. C
Page 2 of 7
Elektronische Bauelemente
SST3585
3.5A, 20V,RDS(ON)75m
N And P-Channel Enhancement Mode Power Mos.FET
-2.5 A, -20V,RDS(ON)160mΩ
Ω



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