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MIC2587 Datasheet(PDF) 13 Page - Micrel Semiconductor |
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MIC2587 Datasheet(HTML) 13 Page - Micrel Semiconductor |
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13 / 16 page ![]() Micrel MIC2587/MIC2587R October 2004 13 M9999-102204 (408) 955-1690 the maximum hot swap load current (IHOT_SWAP(MAX)) which the circuit may let pass in the case of tolerance build-up in the opposite direction. Here, the worse-case maximum is found using a VTRIP(MAX) threshold of 55mV and a sense resistor 3% low in value: I HOT_SWAP(MAX) = 55mV 0.97 ×R SENSE(NOM) () = 56.7mV R SENSE(NOM) In this case, the application circuit must be sturdy enough to operate over a ~1.5-to-1 range in hot swap load currents. For example, if an MIC2587 circuit must pass a minimum hot swap load current of 4A without nuisance trips, RSENSE should be set to: Ω = = 9.75m 4A 39mV R SENSE(NOM) where the nearest 1% standard value is 9.76m Ω. At the other tolerance extremes, IHOT_SWAP(MAX) for the circuit in question is then simply: I HOT_SWAP(MAX) = 56.7mV 9.76m Ω = 5.8A With a knowledge of the application circuit's maximum hot swap load current, the power dissipation rating of the sense resistor can be determined using P = I 2 × R. Here, The current is IHOT_SWAP(MAX) = 5.8A and the resistance RSENSE(MIN) = (0.97)(RSENSE(NOM)) = 9.47mΩ. Thus, the sense resistor's maximum power dissipation is: PMAX = (5.8A) 2 × (9.47mΩ) = 0.319W A 0.5W sense resistor is a good choice in this application. When the MIC2587/MIC2587R’s foldback current limiting circuit is engaged in the above example, the current limit would nominally fold back to 1.23A when the output is shorted to ground. PCB Layout Recommendations 4-Wire Kelvin Sensing Because of the low value typically required for the sense resistor, special care must be used to accurately measure the voltage drop across it. Specifically, the measurement technique across RSENSE must employ 4-wire Kelvin sensing. This is simply a means of ensuring that any voltage drops in the power traces connected to the resistors are not picked up by the signal conductors measuring the voltages across the sense resistors. Figure 6 illustrates how to implement 4-wire Kelvin sensing. As the figure shows, all the high current in the circuit (from VCC through RSENSE and then to the drain of the N-channel power MOSFET) flows directly through the power PCB traces and through RSENSE. The voltage drop across RSENSE is sampled in such a way that the high currents through the power traces will not introduce significant parasitic voltage drops in the sense leads. It is recommended to connect the hot swap controller's sense leads directly to the sense resistor's metalized contact pads. The Kelvin sense signal traces should be symmetrical with equal length and width, kept as short as possible and isolated from any noisy signals and planes. Additionally, for designs that implement Kelvin sense connections that exceed 1” in length and/or if the Kelvin (signal) traces are vulnerable to noise possibly being injected onto these signals, the example circuit shown in Figure 7 can be implemented to combat noisy environments. This circuit implements a 1.6 MHz low- pass filter to attenuate higher frequency disturbances on the current sensing circuitry. However, individual system analysis should be used to determine if filtering is necessary and to select the appropriate cutoff frequency for each specific application. Other Layout Considerations Figure 8 is a recommended PCB layout diagram for the MIC2587-2BM. Many hot swap applications will require load currents of several amperes. Therefore, the power (VCC and Return) trace widths (W) need to be wide enough to allow the current to flow while the rise in temperature for a given copper plate (e.g., 1oz. or 2oz.) is kept to a maximum of 10°C to 25°C. Also, these traces should be as short as possible in order to minimize the IR drops between the input and the load. The feedback network resistor values in Figure 8 are selected for a +24V application. The resistors for the feedback (FB) and ON pin networks should be placed close to the controller and the associated traces should be as short as possible to improve the circuit’s noise immunity. The input “clamping diode” (D1) is referenced in the “Typical Application Circuit” on Page 1. If possible, use high-frequency PCB layout techniques around the GATE circuitry (shown in the “Typical Application Circuit”) and use a dummy resistor (e.g., R3 = 0 Ω) during the prototype phase. If R3 is needed to eliminate high-frequency oscillations, common values for R3 range between 4.7 Ω to 20Ω for various power MOSFETs. Finally, the use of plated-through vias will be needed to make circuit connection to the power and ground planes when utilizing multi-layer PCBs. MOSFET and Sense Resistor Vendors Device types, part numbers, and manufacturer contacts for power MOSFETs and sense resistors are provided in Table 1. |
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