© Semiconductor Components Industries, LLC, 2007

March, 2007 − Rev. 4

1

Publication Order Number:

BC372/D

BC372, BC373

High Voltage

Darlington Transistors

NPN Silicon

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

BC372

BC373

100

80

Vdc

Collector − Base Voltage

BC372

BC373

100

80

Vdc

Emitter−Base Voltage

12

Vdc

Collector Current − Continuous

1.0

Adc

625

5.0

mW

mW/

°C

1.5

12

W

mW/

°C

Operating and Storage Junction

Temperature Range

−55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient

200

°C/W

Thermal Resistance, Junction−to−Case

83.3

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

COLLECTOR 3

BASE

2

EMITTER 1

1 2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92

CASE 29

STYLE 1

Device

Package

ORDERING INFORMATION

BC372G

TO−92

(Pb−Free)

5000 Units / Bulk

BC373RL1

TO−92

2000 / Tape & Reel

BC373RL1G

TO−92

(Pb−Free)

2000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MARKING DIAGRAM

BC

37x

AYWW

G

G

x

= 2 or 3

A

= Assembly Location

Y

= Year

WW = Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)