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BC372 Datasheet(PDF) 2 Page - ON Semiconductor

Part # BC372
Description  High Voltage Darlington Transistors
PDF  4 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BC372 Datasheet(HTML) 2 Page - ON Semiconductor

  BC372 Datasheet HTML 1Page - ON Semiconductor BC372 Datasheet HTML 2Page - ON Semiconductor BC372 Datasheet HTML 3Page - ON Semiconductor BC372 Datasheet HTML 4Page - ON Semiconductor  
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BC372, BC373
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage(1)
(IC = 100 mAdc, IB = 0)
BC372
BC373
V(BR)CES
100
80
−
−
−
−
Vdc
Collector − Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
BC372
BC373
V(BR)CBO
100
80
−
−
−
−
Vdc
Emitter − Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
12
−
−
Vdc
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
BC372
(VCB = 60 Vdc, IE = 0)
BC373
ICBO
−
−
−
−
100
100
nAdc
Emitter Cutoff Current
(VEB = 10 V, IC = 0)
IEBO
−
−
100
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 250 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
8.0
10
−
−
−
160
K
Collector − Emitter Saturation Voltage
(IC = 250 mAdc, IB = 0.25 mAdc)
VCE(sat)
−
1.0
1.1
Vdc
Base − Emitter Saturation Voltage
(IC = 250 mAdc, IB = 0.25 mAdc)
VBE(sat)
−
1.4
2.0
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain Bandwidth Product
(IC = 100 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
200
−
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
−
10
25
pF
Noise Figure
(IC = 1.0 mAdc, VCE = 5.0 Vdc, Rg = 100 kW, f = 1.0 kHz)
NF
−
2.0
−
dB
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle 2.0%.



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