© Semiconductor Components Industries, LLC, 2008

September, 2008 − Rev. 3

1

Publication Order Number:

MJ11021/D

MJ11021(PNP)

MJ11022 (NPN)

Complementary Darlington

Silicon Power Transistors

Complementary Darlington Silicon Power Transistors are designed

for use as general purpose amplifiers, low frequency switching and

motor control applications.

Features

t = 250 ms

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

250

Vdc

Collector−Base Voltage

250

Vdc

Emitter−Base Voltage

50

Vdc

Collector Current − Continuous

− Peak (Note 1)

15

30

Adc

Base Current

0.5

Adc

Derate Above 25°C

175

1.16

W

W/°C

Operating and Storage Junction

Temperature Range

– 65 to +175

− 65 to +200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

0.86

°C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−204 (TO−3)

CASE 1−07

STYLE 1

15 AMPERE

COMPLEMENTARY

DARLINGTON POWER

TRANSISTORS

250 VOLTS, 175 WATTS

http://onsemi.com

Device

Package

Shipping

ORDERING INFORMATION

MJ11021

TO−3

100 Units/Tray

MJ11022

TO−3

100 Units/Tray

MJ11021G

TO−3

(Pb−Free)

100 Units/Tray

MJ11022G

TO−3

(Pb−Free)

100 Units/Tray

MARKING

DIAGRAM

MJ1102x = Device Code

x = 1 or 2

G= Pb−Free Package

A

= Location Code

YY

= Year

WW

= Work Week

MEX

= Country of Orgin

MJ1102xG

AYYWW

MEX

COLLECTOR

CASE

BASE

1

EMITTER 2

COLLECTOR

CASE

BASE

1

EMITTER 2

NPN

PNP

MJ11022

MJ11021

2

1