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MJ11021 Datasheet(PDF) 2 Page - ON Semiconductor

Part # MJ11021
Description  Complementary Darlington Silicon Power Transistors
PDF  5 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJ11021 Datasheet(HTML) 2 Page - ON Semiconductor

  MJ11021 Datasheet HTML 1Page - ON Semiconductor MJ11021 Datasheet HTML 2Page - ON Semiconductor MJ11021 Datasheet HTML 3Page - ON Semiconductor MJ11021 Datasheet HTML 4Page - ON Semiconductor MJ11021 Datasheet HTML 5Page - ON Semiconductor  
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MJ11021(PNP)
MJ11022 (NPN)
http://onsemi.com
2
150
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
50
75
100
125
200
200
50
100
0
150
175
25
0
Figure 2. Switching Times Test Circuit
V2
APPROX
+12 V
V1
APPROX
-8.0 V
0
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
25
ms
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
VCC
100 V
RC
SCOPE
TUT
RB
D1
51
+4.0 V
≈ 10 K
≈ 8.0
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse diode and voltage polarities.
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 0.1 Adc, IB = 0)
MJ11021, MJ11022
VCEO(sus)
250
−
Vdc
Collector Cutoff Current
(VCE = 125, IB = 0)
MJ11021, MJ11022
ICEO
−
1.0
mAdc
Collector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C)
ICEV
−
−
0.5
5.0
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
−
2.0
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc)
(IC = 15 Adc, VCE = 5.0 Vdc)
hFE
400
100
15,000
−
−
Collector−Emitter Saturation Voltage
(IC = 10 Adc, IB = 100 mA)
(IC = 15 Adc, IB = 150 mA)
VCE(sat)
−
−
2.0
3.4
Vdc
Base−Emitter On Voltage
IC = 10 A, VCE = 5.0 Vdc)
VBE(on)
−
2.8
Vdc
Base−Emitter Saturation Voltage
(IC = 15 Adc, IB = 150 mA)
VBE(sat)
−
3.8
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain Bandwidth Product
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
[hfe]
3.0
−
Mhz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJ11022
MJ11021
Cob
−
−
400
600
pF
Small−Signal Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
hfe
75
−
−
SWITCHING CHARACTERISTICS
Typical
Characteristic
Symbol
NPN
PNP
Unit
Delay Time
(VCC = 100 V, IC = 10 A, IB = 100 mA
VBE(off) = 50 V) (See Figure 2)
td
150
75
ns
Rise Time
tr
1.2
0.5
ms
Storage Time
ts
4.4
2.7
ms
Fall Time
tf
10.0
2.5
ms
1. Pulsed Test: Pulse Width = 300 ms, Duty Cycle v 2%.



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