GP1S32

s Absolute Maximum Ratings

(Ta = 25˚C )

s Outline Dimensions

(Unit : mm )

s Features

s Applications

*1 For 5 seconds

1. Ultra-compact package

Internal connection diagram

Slit width

Rest of gate

Center of

light path

1 Anode

3 Emitter

12

3

4

2 Collector

4 Cathode

g 3.2

g2.5

4 - 0.5

4.2

(C0.8)

(0.3)

1.15

4.2

2

3

4

1

* Tolerance :± 0.2mm

* Burr's dimensions: 0.15MAX.

* Rest of gate : 0.3MAX.

* ( ): Reference dimensions

* The dimensions indicated by g refer

to those measured from the lead base.

Subminiature Photointerrupter

4. High speed response

1. Floppy disk drives

Parameter

Symbol

Rating

Unit

Input

Forward current

50

mA

6V

Power dissipation

P

75

mW

Output

Collector-emitter voltage

35

V

Emitter-collector voltage

6V

Collector current

20

mA

Collector power dissipation

75

mW

Total power dissipation

Operating temperature

100

- 25 to + 85

mW

˚C

Storage temperature

- 40 to + 100

˚C

260

˚C

Reverse voltage

GP1S32

Soldering area

data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,

1.6

+ 0.2

- 0.1

4 - 0.15

+ 0.2

- 0.1

2. PWB mounting type

3. High sensing accuracy ( Slit width : 0.3mm )