Data Sheet

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© 2011 ROHM Co., Ltd. All rights reserved.

Band Switching Diode

DAN222



Applications



Dimensions (Unit : mm)



Land size figure (Unit : mm)

Ultra high speed switching



Features

1) Ultra small mold type. (EMD3)

2) High reliability.



Construction

Silicon epitaxial planar



Structure



Taping specifications (Unit : mm)



Absolute maximum ratings (Ta=25°C)

Symbol

Unit

V

V

mA

Io

mA

A

Pd

mW

Tj

°C

Tstg

°C

f

MHz



Electrical characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

-

-

1.2

V

-

-

0.1

Ct

-

-

3.5

pF

trr

-

-

4

ns

Parameter

Limits

Reverse voltage (repetitive peak)

80

Reverse voltage (DC)

80

Forward current (single)

300

Average rectified forward voltage (single)

100

Surge current （t=1us）

4

Power dissipation

150

Junction temperature

150

Storage temperature

55 to 150

Rated in slash put frequency

100

Capacitance between terminals

Reverse recovery time

Parameter

Conditions

Forward voltage

Reverse current

EMD3

1.0

0.5

0.5

0.7

0.6

0.6

ROHM : EMD3

JEITA : SC-75A

JEDEC : SOT-416

dot (year week factory)

(3)

1.6±0.2

1.0±0.1

0.5

0.5

(2)

(1)

0.15±0.05

0.7±0.1

0.55±0.1

0～0.1

0.2±0.1

　　-0.05

0.3±0.1

　　　 0.05

4.0±0.1

2.0±0.05

φ1.55±0.1

　　　　　 0

φ0.5±0.1

0.3±0.1

1.8±0.1

0.9±0.2

φ

1.5 0.1

0

1/2

2011.06 - Rev.B