Data Sheet

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Fast recovery diodes

RF601B2D



Applications



Dimensions (Unit : mm)



Land size figure (Unit : mm)

General rectification



Features

1)Power mold type.(CPD)

3)Very fast recovery

4)Low switching loss



Structure



Construction

Silicon epitaxial planer



Structure



Taping dimensions (Unit : mm)



Absolute maximum ratings (Ta=25

C)

Symbol

Unit

V

V

Io

A

A

Tj

C

Tstg

C



Electrical characteristic (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

-

0.87

0.93

V

Reverse current

-

0.01

10

A

Reverse recovery time

trr

-

14

25

ns

Thermal impedance

jc

--

6

C/W

JUNCTION TO CASE

Storage temperature

55 to 150

(*1) Business frequencies, Rating of R-load, Tc=128

C, 1/2 Io per diode

Conditions

Parameter

Forward current surge peak (60Hz/1cyc)

40

Junction temperature

150

Parameter

Limits

Reverse voltage (repetitive peak)

200

Reverse voltage (DC)

200

Average rectified forward current (*1)

6

CPD

1.6

2.3

1.6

2.3

6.0

(1)

(3)

(2)

1/3

2011.05 - Rev.F